Patents - EUON
Manufacturing - Overview - Patents Text
This section looks at the patenting activity in the field of nanotechnology and manufacturing in 2017-2020. Granted patents and patent applications focused on manufacturing and nanotechnology were extracted from the general collection of nanotechnology patents in 2017-2020 developed by the study team for the database. The patents were collected from Espacenet database maintained by the European Patent Office.
The dataset of patents on manufacturing and nanotechnology was developed by extracting the granted patents and patent applications that contained the CPC classes and sub-classes dedicated to manufacturing in their bibliographic information. It should be noted that most nanotechnology patents contain multiple classes in their subject descriptions. In CPC manufacturing B82Y40/00 “Manufacture and treatment of nanostructures”.1
Patents on nanotechnology in Manufacturing
As a result of patent collection mining, 18444 patent applications and granted patents published in 2017-2020 were identified. It indicates to a huge interest to manufacturing domain. The number of patents and patent applications containing manufacturing classification steadily increased each year.
Most patents (16116, 87%) were published in the national patent offices, while the rest – in World Intellectual Property Organisation (WIPO, 2095, 11%) and the European Patent Office (233, 1%).
China (13442 applications, 73%) prevailed among the countries where most patent applications were published. Other countries, such as USA, South Korea, Russian Federation and Japan that were in top five by the number of published applications significantly lagged behind China.
|Table AVIII-2: Top five countries by filed patents/applications in agriculture and nanotechnology in 2017-2020|
|Country||No. of patents/patent applications, %|
|China||13 442, 73%|
|Russian Federation||369, 2%|
Patent applications and granted patents contained only one CPC sub-class referring to manufacturing. One patent application might combine multiple CPC sub-classes related to health, ICT and other fields.
|Table AVIII-3: Examples of patents focused on B82Y40/00 sub-class|
|Pickett, N. et al. (2018). Chemical vapor deposition method for fabricating two-dimensional materials. No. US10062568B2. Available here.||A method of synthesis of two-dimensional metal chalcogenide monolayers, such as WSe2 and MoSe2, is based on a chemical vapor deposition approach that uses H2Se or alkyl or aryl selenide precursors to form a reactive gas. The gaseous selenium precursor may be introduced into a tube furnace containing a metal precursor at a selected temperature, wherein the selenium and metal precursors react to form metal chalcogenide monolayers.|
|Moon, J. H.; Lee, J. (2020). Lithium-sulphur battery cathode active material including the multi-armed nanoparticle and lithium-sulphur battery including the cathode active material and mechanical synthesis method for multi-armed nanoparticle. No. KR102190397B1 Available here.||A multi-armed nanoparticle sulphur composite can increase the degree of integration between nanoparticles. Therefore, the multi-armed nanoparticle sulphur composite can be effectively applied to a positive electrode of a lithium-sulphur battery.|
Manufacturing innovation breakthroughs in patents
Innovation breakthrough is a peculiar type of innovation that has a profound effect on subsequent inventions, products and services. Three indicators of patents were studied to identify innovation breakthroughs – number of forward citations, number of citing organisations and number of citing countries.
Thirteen patents/applications met the requirements of innovation breakthroughs in manufacturing. Four patents/applications were published by Samsung Electronics Co. Ltd. (South Korea) and three – by IBM (USA). Each of the rest organisations published two patents/applications – Intel Corporation (USA), University of California (USA) and Shaanxi University of Science and Technology (China).
|Table AVIII-4: Manufacturing breakthrough patents and patent applications in 2017-2020|
|Bibliographic data||No. of citations||No. of citing organisations||No. of citing countries|
|Balakrishnan, K. et al. (2017). Replacement III-V or germanium nanowires by unilateral confined epitaxial growth. No. US9570551B1. IBM. Available here.||33||7||4|
|Rodder, M.; Hong, J. G. (2018). Gate-all-around nanosheet field-effect transistors and methods of manufacturing the same. Samsung Electronics Co. Ltd. No. US10008583B1. Available here.||24||6||6|
|Yang, P. et al. (2017). Inorganic halide perovskite nanowires and methods of fabrication thereof. University of California. No. US2017217785A1. Available here.||17||15||4|
|Cao, L. et al. (2017). Synthetic method of Ni3S2 microrod array. Shaanxi University of Science and Technology. No. CN107324408A. Available here.||12||8||1|
|Huang, J. et al. (2018). Preparation method of nitrogen-sulfur co-doped three-dimensional graphene, prepared product and product application thereof. Shaanxi University of Science and Technology. No. CN108470890A. Available here.||12||7||2|
|Zhang, J. et al. (2017). Co-doped core/shell nanocrystals for visible light emission. University of California. No. WO2017019789A1. Available here.||11||6||4|
|Thomas, N. et al. (2018). On-chip control logic for qubits. Intel Corporation. No. WO2018063206A1. Available here.||10||5||3|
|Lampert, L. et al. (2019). Wafer-scale integration of dopant atoms for donor- or acceptor-based spin qubits. Intel Corporation. No. US2019043968A1. Available here.||10||4||2|
|Cheng, K. et al. (2019). Integrating standard-gate and extended-gate nanosheet transistors on the same substrate. IBM. No. US10243054B1. Available here.||10||5||5|
|Chung, D. et al. (2018). Layered structures, production methods thereof, and liquid crystal display including the same. Samsung Electronics Co. Ltd. No. Available here.||9||5||4|
|Park, S. H. et al. (2018). Quantum dots, a composition or composite including the same, and an electronic device including the same. Samsung Electronics Co. Ltd. No. CN108102640A. Available here.||8||4||2|
|Miao, X. et al. (2019). Nanosheet transistor with high-mobility channel. IBM. No. US10424639B1. Available here.||5||3||3|
|Moon, J. et al. (2019). Silicon-containing structure, method of preparing the same, carbon composite using the same, and electrode, lithium battery, and device each including the same. Samsung Electronics Co. Ltd. No. EP3518328A1. Available here.||4||3||3|
1 European Patent Office. (2022). Cooperative Patent Classification, B: Specific uses or applications of nanostructures; measurement or analysis of nanostructures; manufacture or treatment of nanostructures. Available at: https://www.cooperativepatentclassification.org/sites/default/files/cpc/scheme/B/scheme-B82Y.pdf